Samsung, Sun Bring Endurance up and Power Down

By Michelle Savage

July 18, 2008 — Samsung Electronics and Sun Microsystems announced yesterday that they have joined forces to develop a flash memory chip for use in solid-state drives (SSD). They claim that the chip has higher endurance levels than current devices on the market today.

The single-level-cell device offers a fivefold increase in data write-and-erase cycles over standard SLC flash memory, said Samsung. The 8GB device also has a higher endurance level to extend the life cycle of a high-transaction data processing server. A single-level-cell flash memory device stores 1 bit of data in each cell.

Samsung said that the drives will bring longer life to video streaming, high-transaction data processing, search engine operations and other high-speed server functions. And with a server-grade memory that offers a hundredfold increase over conventional hard drives in the number of data transfers per watt, Samsung said data centers will see "substantial power savings.”

"Sun sees incredible upside to using server-grade SLC NAND flash to accelerate customers' applications, and we plan to incorporate this technology into our line of servers and storage," said Michael Cornwell, lead technologist for flash memory at Sun, in a statement.

Related Search Term(s): Power, storage hardware, Samsung, Sun

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Samsung, Sun Bring Endurance up and Power Down

By Michelle Savage

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